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CEP02N6/CEB02N6
4
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter DYNAMIC CHARACTERISTICS b
Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Forward Voltage CISS COSS CRSS
a
Symbol
Condition
Min Typ Max Unit
250 50 30 1.5
PF PF PF
VDS =25V, VGS = 0V f =1.0MHZ
4
VGS = 0V, Is =2A
DRAIN-SOURCE DIODE CHARACTERISTICS
VSD
V
Notes a.Pulse Test:Pulse Width 300 s, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. c. L=60mH, IAS=2.0A, VDD=50V, RG=25 , Starting TJ=25 C
3.0 VGS=10,9,8,7V 2.5
ID, Drain Current(A)
2.0 1.5 1.0
ID, Drain Current (A)
150 C
1
VGS=6V
VGS=5V
0.5 0 0 2 4 6 8 10 12
-55 C 25 C
1.VDS=40V 2.Pulse Test
0.1 2
4
6
8
10
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
4-4
CEP02N6/CEB02N6
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
600 500
2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200
ID=1A VGS=10V
C, Capacitance (pF)
400 300 200 100 0 0 5 10 15 20 25 Coss Crss Ciss
4
VDS, Drain-to Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage
1.30 1.20 1.10 1.00 0.90 0.80 0.70 0.60 -50 -25 0 25 50 75 100 125 150 VDS=VGS ID=250 A
Figure 4. On-Resistance Variation with Temperature
1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 ID=250 A
0
25
50
75 100 125 150
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation with Temperature
4
Figure 6. Breakdown Voltage Variation with Temperature
20 10 VGS=0V
gFS, Transconductance (S)
VDS=50V 3
2
Is, Source-drain current (A)
0 1 2 3 4
1
1 0
0.1 0.4 0.6 0.8 1.0 1.2
IDS, Drain-Source Current (A)
VSD, Body Diode Forward Voltage (V)
Figure 7. Transconductance Variation with Drain Current 4-5
Figure 8. Body Diode Forward Voltage Variation with Source Current
CEP02N6/CEB02N6
VGS, Gate to Source Voltage (V)
15 12 9 6 3 0 0 6 12 18 24
Qg, Total Gate Charge (nC)
10
VDS=480V ID=2A
ID, Drain Current (A)
1
RD
S
4
(O
N
i )L
t mi
D C
1m
10 m s
10
s
s
0.1 TC=25C Tj=25 C Single Pulse 1 10 100 500 1000
0.01
VDS, Drain-Source Voltage (V)
Figure 9. Gate Charge
Figure 10. Maximum Safe Operating Area
VDD t on V IN D VGS RGEN G
90%
toff tr
90%
RL VOUT
td(on) VOUT
td(off)
90% 10%
tf
10%
INVERTED
S
VIN
50% 10%
50%
PULSE WIDTH
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
2
r(t),Normalized Effective Transient Thermal Impedance
1 D=0.5 0.2
0.1 0.1 0.05 0.02 0.01 Single Pulse PDM t1 t2 1. R JC (t)=r (t) * R JC 2. R JC=See Datasheet 3. TJM-TC = P* R JC (t) 4. Duty Cycle, D=t1/t2 1 10 100 1000 10000
0.01 0.01
0.1
Square Wave Pulse Duration (msec)
Figure 13. Normalized Thermal Transient Impedance Curve
4-6

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